Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7632376B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jun 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate. The apparatus further includes a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate. The apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.