Methods of forming capacitors
US7635623B2 · kind B2 · utility
4Cited by
3References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2006 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Sep 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.