Vertical CVD apparatus for forming silicon-germanium film
US7648895B2 · kind B2 · utility
321Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Dec 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45578
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.