Method to form ultra high quality silicon-containing compound layers

US7651953B2 · kind B2 · utility

Assignee

• ASM America, Inc. · US

Inventors

• Michael A. Todd · Danbury, US
• Keith Doran Weeks · Chandler, US
• Christiaan J. Werkhoven · Gilbert, US
• Christophe Pomarede · Phoenix, US

Key dates

• Filing date: Oct 23, 2007
• Grant date: Jan 26, 2010
• Expiry date: Oct 23, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.