Programming method for phase change memory
US7660147B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.