Semiconductor integrated circuit device and method of manufacturing the same
US7667218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2005 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Nov 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time memory retention is low due to low phase change temperature is and, at the same time, a problem that power consumption of the device is high since a large current requires to rewrite memory information due to low resistance. A portion of constituent elements for a chalcogenide comprises nitride, oxide or carbide which are formed to the boundary between the chalcogenide film and a metal plug as an underlying electrode and to the grain boundary of chalcogenide crystals thereby increasing the phase change temperature and high Joule heat can be generated even by a small current by increasing the resistance of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.