Method for direct bonding two semiconductor substrates
US7670929B2 · kind B2 · utility
9Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.