Hafnium doped cap and free layer for MRAM device
US7672093B2 · kind B2 · utility
25Cited by
7References
15Claims
0Family size
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Key dates
| Filing date | Oct 17, 2006 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jun 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.