Process for making thin film field effect transistors using zinc oxide
US7674662B2 · kind B2 · utility
2Cited by
37References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2006 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Aug 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer. Thereafter, the active channel is formed by dry etching the source-drain electrode layer without effectively etching the zinc oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.