Method and apparatus for forming silicon oxide film
US7700156B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Aug 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.