Contact spacer formation using atomic layer deposition
US7704878B2 · kind B2 · utility
2Cited by
2References
22Claims
0Family size
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Key dates
| Filing date | Oct 3, 2005 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Oct 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact structure in a semiconductor device includes a layer of dielectric material and a via formed through the dielectric material. The contact structure further includes a spacer formed on sidewalls of the via using atomic layer deposition (ALD) and a metal deposited in the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.