Semiconductor device with improved breakdown properties and manufacturing method thereof
US7709889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Jun 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
The present invention provides a semiconductor device (20) comprising a trench (5) formed in a semiconductor substrate formed of a stack (4) of layers (1,2,3), a layer (6) of a first, grown dielectric material covering sidewalls and bottom of the trench (5), the layer (6) including one or more notches (13) at the bottom of the trench (5) and one or more spacers (14) formed of a second, deposited dielectric material to fill the one or more notches (13) in the layer (6) formed of the first, grown dielectric material. The semiconductor device (20) according to the present invention shows improved breakdown voltage and on-resistance. The present invention furthermore provides a method for the manufacturing of such semiconductor devices (20).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.