Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
US7719871B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.