Semiconductor device having RF shielding and method therefor
US7745910B1 · kind B1 · utility
84Cited by
23References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 10, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Aug 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate comprising at least one dielectric layer and at least one metal layer on a first surface of the substrate. A die is attached to the first surface of the substrate. A mold compound is used to encapsulate the die and partially encapsulate the first surface of the substrate. The mold compound has a protrusion proximate to the at least one metal layer. A conductive material covers the mold compound, including the protrusion, and contacts the at least one metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.