Method of reducing the surface roughness of a semiconductor wafer
US7749910B2 · kind B2 · utility
2Cited by
24References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for reducing the roughness of a free surface of a semiconductor wafer that includes removing material from the free surface of the wafer to provide a treated wafer, and performing a first rapid thermal annealing on the treated wafer in a pure argon atmosphere to substantially reduce the roughness of the free surface of the treated wafer. The material removal is selected and conducted to improve the effectiveness of the subsequent rapid thermal annealing in reducing the roughness of the free surface of the treated wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.