Strapping contact for charge protection
US7750407B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2006 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Dec 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
Abstract
A semiconductor device includes a substrate and a memory cell formed on the substrate. The memory cell includes a word line. The semiconductor device also includes a protection area formed in the substrate, a conductive structure configured to extend the word line to the protection area, and a contact configured to short the word line and the protection area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.