Method and apparatus for forming silicon-containing insulating film
US7758920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.