Test structure for monitoring leakage currents in a metallization layer
US7764078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2007 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jan 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.