Patent · US Active

Test structure for monitoring leakage currents in a metallization layer

US7764078B2 · kind B2 · utility

5Cited by
24References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 16, 2007
Grant dateJul 27, 2010
Priority date
Expiry dateJan 16, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.