Method for fabricating a semiconductor on insulator wafer
US7776716B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 9, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.