Integrated circuit system employing selective epitaxial growth technology
US7795680B2 · kind B2 · utility
0Cited by
6References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Dec 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the integrated circuit system; processing the dielectric liner to form a trench spacer; and depositing an epitaxial growth within the trench that includes a crystalline orientation that is substantially identical to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.