Plasma control using dual cathode frequency mixing
US7838430B2 · kind B2 · utility
7Cited by
18References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2004 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Sep 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.