Patent · US Active

Structure for stochastic integrated circuit personalization

US7838873B2 · kind B2 · utility

16Cited by
7References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 18, 2008
Grant dateNov 23, 2010
Priority date
Expiry dateMay 14, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/68
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower conductive layer, forming an intermediate layer over the short prevention layer, wherein the intermediate layer is characterized by randomly structured nanopore features. An upper conductive layer is formed over the random nanopore structured intermediate layer. The upper conductive layer is patterned into an array of individual cells, wherein a measurable electrical parameter of the individual cells has a random distribution from cell to cell with respect to a reference value of the electrical parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.