Patent · US Active

Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart

US7851913B2 · kind B2 · utility

3Cited by

4References

37Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Gutt · Taufkirchen, DE
Dirk Siepe · Dortmund, DE
Thomas Laska · Birkenfeld, DE
Michael Melzl · Neutraubling, DE
Matthias Stecher · Munich, DE
Roman Roth · Sattendorf, AT

Key dates

Filing date	Nov 20, 2006
Grant date	Dec 14, 2010
Priority date	—
Expiry date	Apr 24, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/351
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.