Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

US7858525B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Juan E. Dominguez · Portland, US
• Adrien LaVoie · Newberg, US
• John J. Plombon · Portland, US
• Joseph H. Han · San Jose, US
• Harsono S. Simka · Saratoga, US
• Bryan C. Hendrix · Danbury, US
• Gregory T. Stauf · Readington, US

Key dates

• Filing date: Mar 30, 2007
• Grant date: Dec 28, 2010
• Expiry date: Apr 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76873
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.