Semiconductor component and method for producing it

US7863680B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Rudolf Zelsacher · Klagenfurt, AT
• Franz Hirler · Isen, DE
• Dietmar Kotz · Moosburg, AT
• Hermann Peri · Wernberg, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Jul 3, 2008
• Grant date: Jan 4, 2011
• Expiry date: Jul 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.