Integrated circuit system for suppressing short channel effects
US7867835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
An integrated circuit system that includes: providing a substrate including an active device with a gate and a gate dielectric; forming a first liner, a first spacer, a second liner, and a second spacer adjacent the gate; forming a material layer over the integrated circuit system; forming an opening between the material layer and the first spacer by removing a portion of the material layer, the second spacer, and the second liner to expose the substrate; and forming a source/drain extension and a halo region through the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.