Patent · US Active

Blocking pre-amorphization of a gate electrode of a transistor

US7879667B2 · kind B2 · utility

2Cited by

8References

29Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Anthony Mowry · Kyle, US
Markus Lenski · Dresden, DE
Andy Wei · Queensbury, US
Roman Boschke · Dresden, DE

Key dates

Filing date	Feb 5, 2008
Grant date	Feb 1, 2011
Priority date	—
Expiry date	May 14, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A technique is presented which provides for a selective pre-amorphization of source/drain regions of a transistor while preventing pre-amorphization of a gate electrode of the transistor. Illustrative embodiments include the formation of a pre-amorphization implant blocking material over the gate electrode. Further illustrative embodiments include inducing a strain in a channel region by use of various stressors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.