Method for fabricating a gate dielectric of a field effect transistor
US7888217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2005 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.