Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates

US7892908B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Angelo Pinto · Augusta, IT
• Frank Scott Johnson · South San Francisco, US
• Benjamin P. McKee · Richardson, US
• Shaofeng Yu · Plano, US

Key dates

• Filing date: Dec 24, 2008
• Grant date: Feb 22, 2011
• Expiry date: Dec 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02636
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Optimizing carrier mobilities in MOS transistors in CMOS ICs requires forming (100)-oriented silicon regions for NMOS and (110) regions for PMOS. Methods such as amorphization and templated recrystallization (ATR) have disadvantages for fabrication of deep submicron CMOS. This invention is a method of forming an integrated circuit (IC) which has (100) and (110)-oriented regions. The method forms a directly bonded silicon (DSB) layer of (110)-oriented silicon on a (100)-oriented substrate. The DSB layer is removed in the NMOS regions and a (100)-oriented silicon layer is formed by selective epitaxial growth (SEG), using the substrate as the seed layer. NMOS transistors are formed on the SEG layer, while PMOS transistors are formed on the DSB layer. An integrated circuit formed with the inventive method is also disclosed.