Benjamin P. McKee
10Patents
3h-index
10Co-inventors
53Inventor score
Filing activity: Apr 16, 2002 → Jul 9, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7148097B2 | Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors | Electricity | 16 | Expired |
| US7229871B2 | Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors | Electricity | 7 | Active |
| US7930656B2 | System and method for making photomasks | Physics | 4 | Active |
| US6682994B2 | Methods for transistor gate formation using gate sidewall implantation | Electricity | 2 | Expired |
| US7098098B2 | Methods for transistors formation using selective gate implantation | Electricity | 1 | Expired |
| US8558318B2 | Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates | Electricity | 1 | Active |
| US9123570B2 | Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates | Electricity | 0 | Active |
| US7572693B2 | Methods for transistor formation using selective gate implantation | Electricity | 0 | Active |
| US7892908B2 | Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates | Electricity | 0 | Active |
| US6969880B2 | High capacitive density stacked decoupling capacitor structure | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.