Semiconductor device having EMI shielding and method therefor
US7898066B1 · kind B1 · utility
46Cited by
22References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2007 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Mar 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate having a plurality of metal layers. A die is coupled to the substrate. A plurality of metal wires is provided. At least one end of each of the metal wires is electrically coupled to at least one metal layer. A mold compound is used to encapsulate the die, a first surface of the substrate, and the plurality of metal wires. A portion of at least one metal wire remains exposed. A conductive coating is applied to the mold compound and to the portion of the at least one metal wire exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.