Method of fabricating a precision buried resistor
US7910450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2006 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.