Method of forming a finFET and structure
US7910482B2 · kind B2 · utility
10Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jul 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate comprising at least a buried oxide (BOX) layer and a semiconductor material layer is provided. The method includes etching the semiconductor material layer to form a vertical semiconductor material structure overlying the BOX layer, leaving an exposed portion of the BOX layer. The method further includes exposing a top surface of the exposed portion of the BOX layer to an oxide etch resistant species to form a thin oxide etch resistant layer overlying the exposed portion of the BOX layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.