Method for forming nanotube semiconductor devices
US7910486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.