Methods for preparing a bonding surface of a semiconductor wafer
US7919391B2 · kind B2 · utility
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10References
17Claims
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Assignee
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Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Mar 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.