Power MOS device with conductive contact layer

US7923774B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Anup Bhalla · Santa Clara, US
• Sik Lui · Sunnyvale, US
• Tiesheng Li · San Jose, US

Key dates

• Filing date: Mar 31, 2009
• Grant date: Apr 12, 2011
• Expiry date: Mar 31, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A semiconductor device includes a drain, a body disposed over the drain, a source embedded in the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench extending through the source into the body, a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source, and a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer.