Film stacks to prevent UV-induced device damage
US7927723B1 · kind B1 · utility
1Cited by
7References
16Claims
0Family size
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Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Mar 29, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/208
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A film stack includes an interlayer dielectric formed over one or more devices. The film stack further includes a first layer having a high extinction coefficient formed on the interlayer dielectric and a second layer having a low extinction coefficient formed on the first layer. The first and second layers prevent ultraviolet induced damage to the one or more devices while minimizing reflectivity for lithographic processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.