Integrated circuit having a plurality of MOSFET devices
US7932178B2 · kind B2 · utility
0Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Jun 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second structural parameter associated therewith, wherein a value of one of the first and a second structural parameter of each device is selected to provide a value of a performance parameter of the device substantially equal to a predetermined reference value, the predetermined reference value being the same for each device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.