Patent · US Active

Methods of forming conductive features and structures thereof

US7947606B2 · kind B2 · utility

0Cited by

2References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jiang Yan · Beijing, CN
Roland Hampp · Bad Abbach, DE
Jin-Ping Han · Fishkill, US
Manfred Eller · Wappingers Falls, US
Alois Gutmann · Poughkeepsie, US

Key dates

Filing date	May 29, 2008
Grant date	May 24, 2011
Priority date	—
Expiry date	Mar 11, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.