Magnetic tunnel junction magnetic memory

US7957181B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-Pierre Nozieres · Meylan, FR
• Ricardo Sousa · Amadora, PT
• Bernard Dieny · Le Pont-de-Claix, FR
• Olivier Redon · Seyssinet-Pariset, FR
• Ioan Lucian Prejbeanu · Seyssinet-Pariset, FR

Key dates

• Filing date: Mar 31, 2008
• Grant date: Jun 7, 2011
• Expiry date: Feb 18, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/935
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.