Method for etching high dielectric constant materials
US7964512B2 · kind B2 · utility
2Cited by
14References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2005 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl3. The high k dielectric material may include Al2O3 in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C2H4, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.