Copper precursors for CVD/ALD/digital CVD of copper metal films
US7964746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2008 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.