Patent · US Active

Semiconductor device with a charge carrier compensation structure and process

US7973359B2 · kind B2 · utility

4Cited by

1References

11Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Franz Hirler · Isen, DE
Armin Willmeroth · Friedberg, DE
Anton Mauder · Kolbermoor, DE
Gerald Deboy · Klagenfurt, AT
Holger Kapels · Holzkirchen, DE
Carolin Tolksdorf · Ebersberg, DE
Frank Pfirsch · Birkenfeld, DE

Key dates

Filing date	Aug 19, 2008
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Feb 24, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.