Phase change memory device and method for fabricating the same
US7989795B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Feb 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.