Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8008117B2 · kind B2 · utility
14Cited by
21References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 22, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.