Patent · US Active

Interconnect structure and method of manufacturing a damascene structure

US8026605B2 · kind B2 · utility

5Cited by

12References

18Claims

0Family size

Assignee

Lam Research Corporation · US

Inventors

Yezdi Dordi · Palo Alto, US
John M. Boyd · Atascadero, US
Fritz Redeker · Fremont, US
William Thie · Mountain View, US
Tiruchirapalli Arunagiri · Fremont, US
Hyungsuk Alexander Yoon · San Jose, US

Key dates

Filing date	Dec 14, 2006
Grant date	Sep 27, 2011
Priority date	—
Expiry date	Jun 22, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.