Method of forming low capacitance ESD device and structure therefor

US8039359B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Thomas Keena · Chandler, US
• Ki Chang · Kansas City, US
• Francine Y. Robb · Tempe, US
• Mingjiao Liu · Gilbert, US
• Ali Salih · Mesa, US
• John Michael Parsey, Jr. · Phoenix, US
• George Chang · Old Saybrook, US

Key dates

• Filing date: Feb 27, 2009
• Grant date: Oct 18, 2011
• Expiry date: Jan 2, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/983

Abstract

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.