Calibration of temperature control system for semiconductor processing chamber
US8047706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jun 26, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K15/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.