Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same
US8058158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a hybrid semiconductor substrate comprises the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby, a higher number of process steps involved in the manufacturing process of hybrid semiconductor substrates may be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.