Patent · US Active

Semiconductor device including conductive element

US8072071B2 · kind B2 · utility

0Cited by

9References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rainer Steiner · Regensburg, DE
Jens Pohl · San Luis Obispo, US
Werner Robl · Regensburg, DE
Markus Brunnbauer · Lappersdorf, DE
Gottfried Beer · Nittendorf, DE

Key dates

Filing date	Feb 19, 2009
Grant date	Dec 6, 2011
Priority date	—
Expiry date	Mar 31, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1461
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a chip comprising a contact element, a structured dielectric layer over the chip, and a conductive element coupled to the contact element. The conductive element comprises a first portion embedded in the structured dielectric layer, a second portion at least partially spaced apart from the first portion and embedded in the structured dielectric layer, and a third portion contacting a top of the structured dielectric layer and extending at least vertically over the first portion and the second portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.